研究目的
Optimization of Quantum Yield of Highly Luminescent Graphene Oxide Quantum Dots and Their Application in Resistive Memory Devices
研究成果
The study successfully optimized the quantum yield of graphene oxide quantum dots (GOQDs) up to 30% at pH 11 and demonstrated their application in resistive memory devices with WORM characteristics. The devices showed very low set voltage and high ON/OFF ratio, with stability confirmed up to 104 s. The findings suggest potential applications in next-generation low-power memory devices and optoelectronic devices.
研究不足
The study focuses on the optimization of quantum yield and application in resistive memory devices, but does not explore the scalability of the synthesis method or the long-term stability of the devices beyond 104 s.
1：Experimental Design and Method Selection:
A facile chemical method of acid treatment was followed for the cutting of graphene oxides (GOs) sheet to extract graphene oxide quantum dots (GOQDs) in aqueous medium at different pH.
2：Sample Selection and Data Sources:
Graphene oxide quantum dots (GOQDs) were synthesized from GOs powder by following a procedure with some modifications.
3：List of Experimental Equipment and Materials:
Materials used include Graphite Powder, Sodium Nitrate, Potassium permanganate, Hydrogen peroxide, Hydrochloric Acid, Sulfuric Acid, Nitric Acid, Sodium Hydroxide, polyvinyl alcohol (PVA), and Indium tin-oxide (ITO) coated glass. Equipment includes digital pH meter, probe sonicator, HR-TEM, AFM, UV-visible absorption spectroscopy, photoluminescence spectroscopy, FTIR, and Raman spectroscopy.
4：Experimental Procedures and Operational Workflow:
The synthesis involved acid treatment of GOs, dispersion in PVA matrix, spin coating to fabricate devices, and electrical characterization.
5：Data Analysis Methods:
Optical analysis was done using UV-visible absorption and photoluminescence spectroscopy. Microstructural analysis was performed using HR-TEM and AFM. Electrical studies were conducted to analyze resistive switching properties.
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UV-visible absorption spectroscopy
Cary 60
Agilent Technologies
Optical analysis of GOs and GOQDs
Cary 60 UV-Vis Spectrophotometer
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photoluminescence spectroscopy
Fluoromax-4C Spectroflurometer
HORIBA
Optical analysis of GOs and GOQDs
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high resolution transmission electron microscopy
JEM-2100
JEOL
Microstructural analysis of GOQDs
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atomic force microscopy
Cyphe
Oxford
Morphological analysis of GOQDs
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Graphite Powder
Alfa Aesar
Starting material for synthesis of graphene oxide quantum dots
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Sodium Nitrate
MERCK
Chemical reagent in the synthesis process
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Potassium permanganate
MERCK
Oxidizing agent in the synthesis of graphene oxide
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Hydrogen peroxide
MERCK
Chemical reagent in the synthesis process
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Hydrochloric Acid
MERCK
Acid treatment for cutting graphene oxides
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Sulfuric Acid
MERCK
Acid treatment for cutting graphene oxides
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Nitric Acid
MERCK
Acid treatment for cutting graphene oxides
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Sodium Hydroxide
NICE
Adjusting pH in the synthesis process
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polyvinyl alcohol
Sigma-Aldrich
Matrix for dispersing GOQDs to fabricate polymer nanocomposites
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Indium tin-oxide coated glass
Sigma-Aldrich
Substrate for device fabrication
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digital pH meter
LMPH-10
LabMan
Measuring and adjusting pH of solutions
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probe sonicator
Q700
QSonica
Ultrasonication of solutions
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Fourier transform infrared
Perkin Elmer
Chemical analysis of GOs and GOQDs
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Raman spectroscopy
Renishaw
Chemical analysis of GOs and GOQDs
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programmable spin-coating unit
Spin NXG P2
APEX Instruments
Spin coating of solutions to fabricate devices
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thermal deposition unit
12A4DM
HHV
Deposition of top electrode
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