研究目的
Investigating the fabrication and performance of an AlN/GaN metal-semiconductor-metal (MSM) photodetector with platinum as Schottky contacts.
研究成果
The AlN MSM photodetector was successfully fabricated on a silicon substrate, demonstrating good electrical characteristics, photo-conductivity, and photo-response results, indicating its ability to detect signals in the UV range. The device showed stable and repetitive on/off cycles, with good response times.
研究不足
The study mentions low photo-response of the hetero-structure layers as a main obstacle in fabricating high-performance photodetector devices. The presence of high dislocation amount within the as-grown layers and the silicon substrate could also affect device performance.
1：Experimental Design and Method Selection:
The aluminium nitride (AlN) sample was fabricated by solid phase MBE machine. The process involved depositing a wetting layer of aluminium nitride on a silicon substrate, growing an epi-layer of gallium nitride on the wetting layer, and then fabricating a thin aluminium nitride layer on the epi-layer gallium nitride. Platinum (Pt) metal contacts were then deposited using magnetron sputtering, followed by annealing treatment.
2：Sample Selection and Data Sources:
The samples were characterized using Field Emission SEM, High Resolution-XRD, and source meter machine for morphological, structural, and electrical behaviors, respectively.
3：List of Experimental Equipment and Materials:
Solid phase MBE machine, RF sputtering machine, Field Emission SEM, High Resolution-XRD, source meter machine.
4：Experimental Procedures and Operational Workflow:
The fabrication process involved specific deposition times for each layer, followed by Pt metallization and annealing. Electrical characterizations were performed under both positive and negative biases, with the device exposed to UV wavelength source at room temperature.
5：Data Analysis Methods:
The Schottky barrier height (SBH) and ideality factor were calculated using specific equations to analyze the electrical properties and photo-responses of the device.
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