研究目的
Investigating the influence of a WSe2 buffer layer at the back electrode on the performance of Cu2ZnSn(S,Se)4 solar cells.
研究成果
The introduction of a p-type WSe2 buffer layer at the back electrode significantly improves the performance of CZTSSe solar cells by enhancing VOC, JSC, and FF, leading to an increase in PCE. The improvement is attributed to the reduction of the back contact barrier and the suppression of MoSe2 formation.
研究不足
The study is limited by the specific conditions of the selenization process and the materials used. The performance improvement mechanism of the WSe2 buffer layer requires further investigation to optimize the solar cell efficiency.
1：Experimental Design and Method Selection:
The study involved preparing CZTSSe-based solar cells with and without a WSe2 buffer layer to compare their performance. The methodology included sputtering, spin-coating, and selenization processes.
2：Sample Selection and Data Sources:
Samples were prepared on Mo-coated soda-lime glass substrates with and without a pre-sputtered W layer. Data were collected from J-V curves, EQE measurements, and SEM images.
3：List of Experimental Equipment and Materials:
Equipment included a DC magnetron sputtering system, rapid thermal processing furnace, SEM, x-ray diffractometer, and solar simulator. Materials included Cu2ZnSnS4 precursor solution, W and Mo targets, and Se pellets.
4：Experimental Procedures and Operational Workflow:
The process involved sputtering W on Mo-coated SLG, spin-coating CZTS precursor, selenization, deposition of CdS, ZnO, and ITO layers, and finally, Al electrode evaporation.
5：Data Analysis Methods:
Performance parameters were extracted from J-V curves. EQE spectra were analyzed to understand light absorption characteristics. SEM and XRD were used for morphological and structural analysis.
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scanning electron microscope
Hitachi S-4800
Hitachi
Used for recording surface morphologies of the CZTSSe thin films.
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sourcemeter
KEITHLEY 2400
KEITHLEY
Used for measuring the current density-voltage (J-V) curves.
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DC magnetron sputtering
Used for sputtering W target to prepare W buffer layer on Mo-coated SLG.
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rapid thermal processing furnace
Used for selenization of the W/Mo-coated SLG and CZTS films.
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x-ray diffractometer
Used for characterizing crystal structures of the CZTSSe absorber layers.
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solar simulator
SAN-EI, XES-40S2-CE
SAN-EI
Used for simulating AM 1.5G solar illumination for J-V curve measurements.
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external quantum efficiency measurement system
Used for measuring the EQE spectra of solar cell devices.
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