研究目的
Investigating the effect of thermal annealing on the electrical properties of nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates.
研究成果
Thermal annealing in nitrogen atmosphere significantly enhances the diode performance by improving structural properties of the interface, resulting in a strong decrease of the leakage current and an enhanced efficiency of electron injection in the nanoscale heterojunctions. The equivalent electrical circuit proposed fits the measured current-voltage characteristics well, from which the parameters characterizing charge transport through the heterojunction were extracted.
研究不足
The study is limited to the effects of thermal annealing and FIB patterning on the electrical properties of ZnO nanorod/GaN heterojunctions. The impact of other factors such as different annealing atmospheres or patterning techniques is not explored.
1：Experimental Design and Method Selection:
The study involves the preparation of ZnO nanorods by chemical bath deposition on plain and FIB-patterned GaN substrates, followed by thermal annealing in nitrogen atmosphere. Electrical properties are measured using a nanoprobe in a scanning electron microscope.
2：Sample Selection and Data Sources:
ZnO nanorods are grown on p-GaN substrates, both plain and patterned by FIB lithography. Electrical measurements are conducted on single nanorod heterojunctions.
3：List of Experimental Equipment and Materials:
Scanning electron microscope (SEM), transmission electron microscopy (TEM), SmarAct nanoprobe, tungsten needle, Ni and Au layers for ohmic contacts.
4：Experimental Procedures and Operational Workflow:
ZnO nanorods are grown, annealed at different temperatures, and their electrical properties are measured using a nanoprobe in SEM.
5：Data Analysis Methods:
The I-V characteristics are analyzed to understand the effect of annealing and patterning on the electrical properties of the heterojunctions.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
