研究目的
Investigating the properties and photovoltaic applications of Al-doped zinc stannate (AZTO) films as a next-generation transparent conducting oxide (TCO).
研究成果
AZTO thin-film TCOs were successfully prepared and demonstrated suitable properties for photovoltaic applications. The optimal SnO2 power for film deposition was identified, and the photovoltaic performance of CIGS solar cells was improved by using AZTO films deposited at an elevated temperature.
研究不足
The study mentions the initial poor efficiency of the CIGS device due to inappropriate substrate temperature and plasma damage to the i-ZnO layer, indicating areas for optimization in future research.
1：Experimental Design and Method Selection:
AZTO thin films were deposited by co-sputtering Al-doped zinc oxide (AZO) and SnO2 targets at room temperature and at an elevated temperature of 350 oC.
2：Sample Selection and Data Sources:
Glass substrates were used for deposition, cleaned with methyl alcohol, acetone, and DI water.
3：List of Experimental Equipment and Materials:
Magnetron sputtering unit, AZO and SnO2 targets, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-Vis-NIR photo-spectrometry, Hall measurement system.
4：Experimental Procedures and Operational Workflow:
Deposition was carried out under various SnO2 powers, with pre-sputtering to remove surface oxides.
5：Data Analysis Methods:
Composition, morphology, optical properties, and electrical properties of the films were analyzed using XPS, SEM, UV-Vis-NIR, and Hall measurements.
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