研究目的
To report a simple and fast route for fabrication of photovoltaic devices based on SbSI nanowires, highlighting their potential for solar energy harvesting and application in photodetectors.
研究成果
The presented method for fabrication of photovoltaic devices with chalcohalide nanowires is simple and fast, can be realized at mild conditions, and does not require any additional high temperature treatment. SbSI nanowires are promising for solar energy harvesting and application in photodetectors.
研究不足
The increase of SbSI nanowires concentration over 60 wt% led to formation of films with insufficient morphology quality. The open circuit voltages and short circuit photocurrent densities are smaller than those reported for SbSI solar cells fabricated via other methods.
1：Experimental Design and Method Selection
Sonochemical synthesis of SbSI nanowires and spin-coating SbSI-polyacrylonitrile (PAN) composite on indium tin oxide (ITO) substrate. Use of TiO2 and P3HT as electron and hole transporting layers, respectively.
2：Sample Selection and Data Sources
SbSI nanowires synthesized from elements: antimony, sulfur, and iodine under ultrasound irradiation in ethanol.
3：List of Experimental Equipment and Materials
Supra 35 (Zeiss) scanning electron microscope, JEOL-JEM 3010 (JEOL Japan) microscope, JDX-7S X-ray diffractometer (JEOL), PHI 5700 (Physical Electronics) spectrometer, PC2000 (Ocean Optics Inc.) spectrophotometer, POLOS-SPIN150i-PTFE spin coater (SPS-Europe B.V.), Q150R ES rotary pumped coater (Quorum Technologies Ltd.), Keithley 2401 Sourcemeter (Tektronix) equipped with a solar simulator SS I-V CT-02 (PV Test Solutions).
4：Experimental Procedures and Operational Workflow
Sonochemical synthesis of SbSI nanowires, characterization of nanowires, preparation of SbSI/PAN films, construction of photovoltaic devices with planar architecture, and investigation of photovoltaic properties.
5：Data Analysis Methods
X-ray diffraction (XRD) for phase identification, X-ray photoelectron spectroscopy (XPS) for valence band and core levels examination, spectrophotometry for optical characterization, and current-voltage measurements for photovoltaic properties.
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Supra 35
Supra 35
Zeiss
Scanning electron microscope for morphology studies
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JEOL-JEM 3010
JEOL-JEM 3010
JEOL Japan
High-resolution transmission electron microscopy (HRTEM) for structure analysis
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JDX-7S X-ray diffractometer
JDX-7S
JEOL
Powder X-ray diffraction (XRD) investigations
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Keithley 2401 Sourcemeter
Keithley 2401
Tektronix
Current-voltage characteristics measurement
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PHI 5700
PHI 5700
Physical Electronics
X-ray photoelectron spectroscopy (XPS) for valence band and core levels examination
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PC2000
PC2000
Ocean Optics Inc.
Spectrophotometer for specular transmittance measurements
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POLOS-SPIN150i-PTFE spin coater
POLOS-SPIN150i-PTFE
SPS-Europe B.V.
Deposition of thin films
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Q150R ES rotary pumped coater
Q150R ES
Quorum Technologies Ltd.
Sputtering of gold electrodes
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solar simulator SS I-V CT-02
SS I-V CT-02
PV Test Solutions
Investigation of photovoltaic devices under standard illumination conditions
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