研究目的
To design a Si-based lattice-matched GeSn/SiGeSn multi-quantum-well laser with high performance.
研究成果
The designed Ge0.9Sn0.1/Si0.14Ge0.71Sn0.15 multi-quantum-well laser shows promising results with a TE mode gain of 7000 cm?1 at 0.5 eV and a TM mode gain of 5500 cm?1 at 0.52 eV. The modal gain reaches 100 cm?1 at a current density of 5 kA/cm2, indicating the potential for Si-based lasers.
研究不足
The study is theoretical and lacks experimental validation. The accuracy of the results depends on the assumptions made, such as the value of ξ in the optical momentum matrix element calculation.
1：Experimental Design and Method Selection:
The design involves calculating the heterojunction band alignment of GeSn/SiGeSn to propose a multi-quantum-well laser structure. Theoretical models for band alignment and optical gain are employed.
2：Sample Selection and Data Sources:
The study uses theoretical calculations based on the properties of GeSn and SiGeSn alloys, with no physical samples.
3：List of Experimental Equipment and Materials:
Not applicable as the study is theoretical.
4：Experimental Procedures and Operational Workflow:
The workflow includes calculating the band alignment, designing the laser structure, and simulating the optical gain.
5：Data Analysis Methods:
The analysis involves calculating the TE and TM gains and the modal gain as functions of photon energy and current density, respectively.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
