研究目的
To explore an interfacial layer design to construct a high quality Si:CQD heterojunction for extending the photodetecting range of the Si:CQD heterojunction device to a short wavelength infrared region.
研究成果
The insertion of a ZnO layer between Si and CQDs significantly reduces interfacial carrier recombination, extending the photodetecting range to the short wavelength infrared region and achieving a high standard detectivity. This approach demonstrates an effective method to build high quality van der Waals heterojunctions on Si surfaces for high-performance infrared photodetectors.
研究不足
The thickness of the ZnO layer affects the device performance, with optimal performance at 10 nm. The large thickness of Si (0.5 mm) contributes to a longer rise time.
1：Experimental Design and Method Selection:
The study involved the integration of silicon with PbS colloidal quantum dots (CQDs) for infrared photodetection, using a layer of ZnO nanoparticles to passivate the silicon surface.
2：Sample Selection and Data Sources:
n-type Si wafers lightly doped with a resistivity of around
3：2 X(cid:
4)cm were used. PbS CQDs were synthesized via the hot-injection method.
4：List of Experimental Equipment and Materials:
Transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive x-ray spectrometry (EDS), Solar Cell Capacitance Simulator (SCAPS), Sinton tool for minority carrier lifetime testing.
5：Experimental Procedures and Operational Workflow:
ZnO film was deposited on cleaned Si wafers using solution synthesized ZnO nanoparticles. PbS CQD film treated with iodide ligands was deposited on ZnO, followed by a CQD layer exchanged with ethanedithiol (EDT) ligands. ITO was deposited as a top transparent electrode.
6：Data Analysis Methods:
EQE, responsivity, detectivity, and response time were calculated and analyzed.
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