研究目的
Investigation of embedded growth of an n-GaN cap layer on multi-quantum shells (MQSs) and nanowires through a tunnel junction (TJ) for the improvement of current injection to the m-plane of the MQSs.
研究成果
Optimal conditions for the embedded growth of an n-GaN cap layer on MQS/nanowires were identified as a very low V/III ratio of 20, an intermediate growth temperature of 800 °C, and a height of the MQS/nanowire structure of 700 nm. These conditions effectively suppress void formation and Mg diffusion, promising for the realization of MQS lasers.
研究不足
The study is limited to the specific conditions of MOVPE growth and the particular structure of GaInN/GaN MQSs and nanowires. The findings may not be directly applicable to other materials or growth methods.
1：Experimental Design and Method Selection:
The study involved systematic variation of growth conditions for an n-GaN cap layer to suppress Mg diffusion and void formation.
2：Sample Selection and Data Sources:
Samples with different MQS/nanowire heights were prepared, and their cross-sectional crystal shapes and morphology were characterized.
3：List of Experimental Equipment and Materials:
Scanning electron microscope (SEM; Hitachi High-Technologies, TS-50) was used for characterization.
4：Experimental Procedures and Operational Workflow:
The growth conditions varied included temperature and V/III ratio, with the height of the MQS/nanowire structure also being a variable.
5：Data Analysis Methods:
The size of voids and the top-bottom difference on the m-plane were measured from SEM images.
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