研究目的
To fabricate a high-performance p-GaN/NiO nanostructures/n-GaN ultraviolet (UV) sandwich structure photodetector with high responsivity and fast response.
研究成果
The p-GaN/NiO nanostructures/n-GaN sandwich structure photodetector exhibits high sensitivity, fast response, and rapid recovery time, providing a new method for high-performance GaN-based UV photodetectors.
研究不足
The study focuses on the fabrication and initial characterization of the photodetector. Long-term stability and scalability for industrial applications are not addressed.
1：Experimental Design and Method Selection:
Metal-organic chemical vapor deposition (MOCVD) was used to grow GaN epilayers. NiO nanostructures were grown on the n-type GaN template by a low-temperature aqueous method. The device was fabricated by combining the as-grown NiO nanostructures/n-GaN/sapphire with p-GaN.
2：Sample Selection and Data Sources:
2 μm GaN epilayers with different doping were used.
3：List of Experimental Equipment and Materials:
MOCVD for GaN growth, X-ray diffraction (XRD), scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), UV–visible spectrophotometer.
4：Experimental Procedures and Operational Workflow:
Growth of GaN and NiO nanostructures, fabrication of the photodetector, characterization of the device.
5：Data Analysis Methods:
Analysis of XRD, SEM, TEM images, and photodetector performance metrics.
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FE-SEM
Hitachi S-4800
Hitachi
Investigation of morphological properties.
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optical power meter
Ophir PD300-UV
Ophir
Calibration of the UV lamp.
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MOCVD
Used for growing GaN epilayers.
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X-ray diffraction
Investigation of the structure characteristic of NiO layer.
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TEM
Philips CM-200
Philips
Investigation of morphological properties.
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UV–visible spectrophotometer
Persee T10
Persee
Obtaining transmittance.
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UV lamp
Used for time-dependent response under UV lamp periodic on and off.
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Xe-arc lamp
Used as a light source with monochromator.
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