研究目的
To realize a versatile VBAM meta-device in which the operational status of each occupying meta-atom can be individually addressed via two independent computer-programmed multichannel DC voltages, providing flexible and real-time control over two spatial coding sequences onto the metasurface for x- and y-LP excitations.
研究成果
The proposed anisotropic digital metasurface whose reflection behaviors can be electrically and independently tuned for two orthogonal polarized THz waves has been successfully demonstrated. The versatility and flexibility of the proposed anisotropic metasurface furnish an inspiring platform to utilize it as a metalens under each desired orthogonal polarizations to concentrate the incident THz wavefront into a predetermined focal spot which can be dynamically altered. The additional degrees of freedom of the VBAM structure will afford powerful capabilities in manipulating both near-field and far-field behaviors simultaneously into each desired orthogonal polarization channels with interchangeable missions in real-time.
研究不足
The technical and application constraints of the experiments include the need for precise control over the biasing voltage to achieve the desired phase transitions in VO2 microwires, the complexity of fabricating the multi-layered meta-particle structure, and the potential for slight side lobes around the focal spot due to the finite and discrete nature of the proposed anisotropic metasurface.
1：Experimental Design and Method Selection:
The meta-particle composed of two perpendicular VO2 microwires whose operational statuses can be arbitrarily and dynamically tuned among two digital states of "0" and "1" independent for dual-polarization channels by mere changing the biasing voltage via two independent computer-programmed multichannel DC network.
2：Sample Selection and Data Sources:
The meta-particle composed of five layers, which from top to bottom, are two perpendicular VO2 microwires (1μm thick), substrate, gold plane (top metallic layer), substrate, two pieces of separated patches (bottom metallic layer).
3：List of Experimental Equipment and Materials:
VO2 microwires, gold plane, sapphire substrate, silicon wafer, photoresist, e-beam lithography equipment, magnetron sputtered technique for VO2 thin film deposition.
4：Experimental Procedures and Operational Workflow:
The fabrication procedure begins with a double-side-polished silicon (Si) wafer; Gold layer deposition using e-beam evaporation; 15μm-thick sapphire is deposited on the substrate using sputtering deposition; Photoresist is spin coated and deposited on a sapphire using photolithography; form the pattern with an electron beam lithography; 1μm thick VO2 thin film is deposited using magnetron sputtered technique; final VBAM structure after lift-off process.
5：Data Analysis Methods:
Full-wave simulations with the commercial CST software when periodic boundary conditions are utilized along the x and y directions and open boundary condition is applied along z-axis.
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