研究目的
Investigating the defect mediated transport in self-powered, broadband and ultrafast photoresponse of MoS2/AlN/Si based photodetector.
研究成果
The integration of 2D layered materials with 3D semiconductors opens up a technical route for the fabrication of next generation highly efficient optoelectronic and electronic device systems. The MoS2/AlN/Si based photodetector exhibits a self-powered and ultrafast photoresponse with a broad band photodetection, demonstrating one of the best results in terms of the device performance of MoS2 thin films-based detectors, till date.
研究不足
The study is limited by the experimental setup and the specific conditions under which the MoS2/AlN/Si heterostructure was fabricated and characterized. The performance of the photodetector may vary under different conditions or with different fabrication techniques.
1：Experimental Design and Method Selection:
The heterojunction is formed by depositing MoS2 thin film by pulsed laser deposition on AlN/Si(111) template.
2：Sample Selection and Data Sources:
AlN template (100 nm thickness, 1 cm2 area) on n-type Si(111) was commercially procured and used as the substrate for the growth of MoS2 in the PLD chamber.
3：List of Experimental Equipment and Materials:
Pulsed laser deposition (PLD) chamber, MoS2 pellet, KrF excimer laser, X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (TEM).
4：Experimental Procedures and Operational Workflow:
MoS2 thin film was grown on top of the AlN/Si substrate by PLD at a deposition temperature of 700 oC. The target to substrate distance was fixed at
5：5 cm. The chamber was evacuated to a base pressure of 0×10?6 mbar prior to deposition. Data Analysis Methods:
XPS and TEM were used to study the chemical composition and structural properties of the samples. The performance of the photodetector was evaluated by measuring the spectral response, responsivity, detectivity, sensitivity, and photoconductive gain.
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