研究目的
Investigating the fabrication of a bifacial p-type PERC solar cell with efficiency over 22% using laser doped selective emitter on a 6-inch mono-crystalline wafer.
研究成果
The study successfully fabricated bifacial p-type PERC solar cells with front and rear efficiencies exceeding 22% and 15%, respectively. The optimization of laser doping parameters and rear side design contributed to the high efficiency. The findings suggest that p-type bifacial PERC cells can achieve competitive efficiencies with optimized processing.
研究不足
The study is limited to p-type wafers and does not explore n-type wafers. The optimization of rear finger geometry and SiNx thickness may not be universally applicable due to variations in manufacturing processes.
1：Experimental Design and Method Selection:
The study involved the fabrication of bifacial p-type PERC solar cells using laser doped selective emitter technology. The methodology included optimizing the square resistance of the p-n junction on the front side and the rear fingers and SiNx layer thickness on the rear side.
2：Sample Selection and Data Sources:
1.6-Ω·cm boron-doped Czochralski (Cz)-grown wafers with an initial thickness of 180 μm were used. The wafers underwent texturization, phosphorous-doped emitter formation, laser doping, and metallization.
3：6-Ω·cm boron-doped Czochralski (Cz)-grown wafers with an initial thickness of 180 μm were used. The wafers underwent texturization, phosphorous-doped emitter formation, laser doping, and metallization.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a laser doping setup, plasma-enhanced chemical vapor deposition (PECVD) for SiNx deposition, and a screen-printing setup for metallization. Materials included boron-doped Cz wafers, phosphorosilicate glass (PSG), and aluminum paste.
4：Experimental Procedures and Operational Workflow:
The process included texturization, emitter formation, laser doping, SiNx deposition, and metallization. The rear side was optimized with different finger geometries and SiNx thicknesses.
5：Data Analysis Methods:
Square resistance was measured by the four-point probe method. I-V curves were measured under simulated AM1.5 sunlight.
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