研究目的
Investigating the sub-threshold conduction characteristics and threshold switching phenomenon in amorphous chalcogenide materials, specifically binary AsxTe1?x thin films, to understand the mechanism of Ovonic threshold switching (OTS).
研究成果
The study successfully analyzed the threshold switching in amorphous AsxTe1?x chalcogenide material based on a trap-controlled SCLC model. The findings provide insights into the mechanism of sub-threshold conduction and threshold switching, offering a basis for optimizing physics-based design and switching parameters for selector devices in three-dimensional cross-point arrays.
研究不足
The study focuses on binary AsxTe1?x thin films, and the findings may not be directly applicable to other chalcogenide materials. The exact mechanism of threshold switching remains partially unclear, indicating areas for further research.
1：Experimental Design and Method Selection:
The study utilized binary AsxTe1?x thin films fabricated by radio-frequency magnetron co-sputtering to investigate OTS characteristics. Optical and electrical analyses were conducted to understand the sub-threshold conduction mechanism.
2：Sample Selection and Data Sources:
AsxTe1?x thin films with varying Te concentrations were prepared. Chemical compositions were estimated by X-ray photoelectron spectroscopy (XPS), and crystallinity was analyzed using grazing-incidence X-ray diffraction and transmittance electron microscopy (TEM).
3：List of Experimental Equipment and Materials:
Equipment included XPS (K-alpha, Thermo VG), TEM (JEOL JEM-F200), ultraviolet visible near-infrared spectrophotometry (Cary 5000, Agilent), and a Keysight B1500A analyzer for electrical characteristics measurement.
4：Experimental Procedures and Operational Workflow:
Thin films were deposited on a W bottom electrode, with TiN as the top electrode. Electrical properties were measured, and optical bandgaps and Urbach energy were determined.
5：Data Analysis Methods:
The conduction mechanism was interpreted based on trap-controlled SCLC modeling, with J–V characteristics analyzed to understand the effects of trap distribution.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
