研究目的
Investigating the fabrication and characterization of Ni-doped ZnO nanorod arrays for UV photodetector application.
研究成果
The NZO NRs exhibited excellent photosensitivity for UV PD applications, with faster rise/decay times than pure ZnO. The optimal Ni content was found to be 4 mM, providing the highest sensitivity. The study demonstrates the potential of NZO NRs in UV photodetector applications.
研究不足
The study is limited by the specific Ni doping concentrations used (0, 4, and 8 mM) and the annealing temperature of 500 °C. The performance of the photodetectors may vary with different doping levels and annealing conditions.
1:Experimental Design and Method Selection:
The study involved the growth of ZnO nanorods with Ni dopants using the CBD method and RF magnetron sputtering technique.
2:Sample Selection and Data Sources:
Corning glass substrates were used, and the samples were characterized using FE-SEM, HR-TEM, EDX, XRD, and PL spectroscopy.
3:List of Experimental Equipment and Materials:
Equipment included RF magnetron sputtering system, FE-SEM (JEOL JSM-6700F), HR-TEM (JEOL JEM-2100F CS-STEM), EDX, XRD (MO3XHF22 MAC-Science), and PL spectrometer (Labram HR). Materials included zinc acetate dihydrate, HMTA, and nickel(II) acetate.
4:Experimental Procedures and Operational Workflow:
The process involved substrate cleaning, seed layer deposition, NR growth, photolithography for MSM structure fabrication, and annealing.
5:Data Analysis Methods:
Data were analyzed for structural, optical, and electrical properties using the mentioned instruments.
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