摘要： Pure phase polycrystalline BiFeO3 ?lm was deposited onto FTO substrate by RF magnetron sputtering method. SEM result shows that BiFeO3 ?lm has the obvious porosity and large clusters which lead to the poor ferroelectric and photovoltaic properties in FTO/BiFeO3/Ag device. However, these properties are improved in p–i–n structured FTO/TiO2/BiFeO3/HTM/Ag device by incorporating the electron and hole transport materials. The hysteresis loop measurement demonstrates the excellent ferroelectric property with large remnant polarization (2Pr = 180 (cid:2)C/cm2) and low leakage current. The J–V curve shows the short-circuit current density is dozens of times larger than that of FTO/BiFeO3/Ag device. Moreover, the photovoltaic output depends on the poling ?eld where the positive poling improves the short-circuit current density to ?85 (cid:2)A/cm2 and the negative poling reduces both the photocurrent and photovoltage. It is believed that the ferroelectric polarization plays a dominant role in the photovoltaic effect.