1：Experimental Design and Method Selection

The InGaN platelets are grown by metal-organic vapor phase epitaxy (MOVPE) on a dome-like InGaN surface formed by chemical mechanical polishing (CMP) of InGaN pyramids. The growth conditions were adjusted to achieve specific indium contents and surface smoothness.

2：Sample Selection and Data Sources

InGaN pyramids were selectively grown on substrates of GaN/sapphire from 100-200 nm large openings in a SiNx mask by MOVPE. The pyramids were then polished to form dome-like surfaces for further InGaN growth.

3：List of Experimental Equipment and Materials

A MOVPE system with a 3x2-inch close coupled showerhead was used for InGaN growth. Triethylgallium (TEG), trimethylindium (TMI), and ammonia were used as precursors. A Hitachi Su8010 SEM, Bruker Dimension Icon AFM, and JEOL 3000F TEM were used for characterization.

4：Experimental Procedures and Operational Workflow

The process involved growing InGaN pyramids, depositing SiOx, polishing with CMP, etching with HF, and then growing additional InGaN layers under controlled conditions to achieve smooth, high-quality surfaces.

5：Data Analysis Methods

Characterization included SEM, AFM, TEM, PL, and CL measurements to assess the quality, morphology, and optical properties of the InGaN platelets.