研究目的
Investigating the prevalence and control of VSe-VCu divacancy defects in reactively sputtered ACIGS solar cells to achieve high efficiency.
研究成果
The study demonstrates the presence of VSe-VCu divacancies in ACIGS solar cells and shows that these defects can be reduced by adjusting growth temperature and alkali content. Understanding and controlling this interplay is crucial for achieving high efficiency in ACIGS solar cells.
研究不足
The study focuses on reactively sputtered ACIGS solar cells, and the findings may not be directly applicable to other types of solar cells. The impact of other potential defects or impurities was not explored.
1：Experimental Design and Method Selection:
Positron annihilation spectroscopy (PAS) was used to probe vacancies in semiconductors. Compositional and structural analysis as well as capacitance-voltage measurements were conducted to observe the interplay between divacancies, (Cu+Ag)/III ratio, grain size, and carrier concentration.
2：Sample Selection and Data Sources:
ACIGS solar cells were fabricated in a manufacturing scale roll-coater tool. Samples were prepared at various growth temperatures and potassium levels.
3：List of Experimental Equipment and Materials:
A variable energy positron beam, high purity germanium detector, Auger electron spectroscopy (AES), electron backscatter diffraction (EBSD), and capacitance-voltage (C-V) measurement setup were used.
4：Experimental Procedures and Operational Workflow:
The (Ag,Cu)(In,Ga)Se2 layer was reactively sputtered in the presence of selenium vapor at elevated temperature. Doppler broadening measurements of positron annihilation radiation were performed. Compositional analysis and grain size measurements were conducted.
5：Data Analysis Methods:
The S and W parameters of the positron-electron annihilation radiation peak were analyzed to determine the nature of vacancy defects. Carrier concentration depth profiles were calculated from C-V measurements.
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