研究目的
To enhance the efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cells by tuning the CdS buffer layer through Indium doping.
研究成果
The efficiency of CIGSSe solar cells is enhanced with In-doped buffer layers due to significant enhancement of both Voc and FF. These improvements were mainly attributed to the effective CdS/CIGSSe interface passivation. The increased carrier concentration of the buffer layer introduces a stronger band bending at the CdS/CIGSSe interface, leading to a fully occupied defect state, which suppresses interface recombination.
研究不足
The technical and application constraints of the experiments include the challenge of incorporating In into CdS via CBD due to the formation of Indium sulfide and/or Indium hydroxide insoluble product, limiting the feasibility of using CBD-based In-doped CdS buffer layers.
1：Experimental Design and Method Selection:
The CdS buffer layer was deposited by chemical bath deposition (CBD) with Indium doping during the growth process by adding InCl3 into the growing aqueous solution.
2：Sample Selection and Data Sources:
CIGSSe absorber was fabricated using a sequential process, in which metallic precursors CuGa/In are sputtered followed by sulfurization after selenization.
3：List of Experimental Equipment and Materials:
Cadmium acetate (CdAc,7.5 mM; Alfa Aesar, 98%), ammonia aqueous solution (Fisher Chemical, 28%), InCl3 powder (Alfa Aesar, 98%), Thiourea (TU, 0.374M; Sigma Aldrich, 99%).
4：5 mM; Alfa Aesar, 98%), ammonia aqueous solution (Fisher Chemical, 28%), InCl3 powder (Alfa Aesar, 98%), Thiourea (TU, 374M; Sigma Aldrich, 99%). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The CIGSSe/Mo/glass sample was immersed into the solution at 70°C for 30 minutes with a slow stirring speed. After completing this process, the resulting CdS film with ~50 nm thickness was rinsed with DI water to remove residue.
5：Data Analysis Methods:
The current density-voltage (J-V) characteristics were measured using a Keithley 4200-SCS semiconductor analyzer. Device performance was measured under an AM 1.5 solar simulator with 100 mW/cm2 power density at 25°C.
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