研究目的
To demonstrate GaN quantum dot single photon emitters operating at 300 K with high brightness and purity, and to explore the limiting factors to key performance metrics for single photon sources.
研究成果
GaN QDs on silicon substrates can provide single photon emission at 300 K with high brightness and purity. The performance is influenced by the spectral overlap of excitonic and biexcitonic emissions, with smaller QDs emitting at higher energies showing promise for room temperature applications.
研究不足
The single photon purity is mainly affected by the spectral overlap with the biexcitonic emission, and the performance depends on the balance between the emission linewidth and the biexciton binding energy.
1：Experimental Design and Method Selection:
The study involves the growth of GaN QDs embedded in a planar AlN layer on silicon substrates using NH3-molecular beam epitaxy (MBE). The optical properties were investigated by micro-photoluminescence (μ-PL) spectroscopy, with excitation by continuous wave lasers at 266 nm or 244 nm.
2：Sample Selection and Data Sources:
The sample consists of 100 nm of high temperature AlN on Si(111), followed by a plane of GaN QDs, a 20 nm AlN top barrier, and a second plane of GaN QDs.
3：List of Experimental Equipment and Materials:
The setup includes a closed-cycle He cryostat, an 80× infinity corrected microscope objective suited for the ultraviolet spectral range, a high resolution spectrometer, and a Hanbury Brown and Twiss interferometer for g(2)(τ) measurements.
4：Experimental Procedures and Operational Workflow:
The QDs were excited with lasers, and the luminescence was collected and routed to either a high resolution spectrometer or a Hanbury Brown and Twiss interferometer.
5：Data Analysis Methods:
The emission characteristics were analyzed, including the second order autocorrelation function measurements to assess single photon purity.
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