研究目的
To develop a tandem GaAsP/SiGe solar cell employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer to reduce threading dislocation density and improve solar cell performance.
研究成果
The incorporation of porous silicon layers in the GaAsP/SiGe solar cell structure has improved the top cell performance and reduced crack propagation, leading to an increase in shunt resistance and overall device performance. This approach shows promise for further improvements in III-V/SiGe solar cells on silicon substrates.
研究不足
The study reports the appearance of cracks in the structure despite the incorporation of porous silicon layers, indicating that crack formation is not completely suppressed. The lack of response in the SiGe bottom cell EQE in samples grown on substrates with porous Si layers is also a limitation.
1：Experimental Design and Method Selection:
The study combines chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) for the growth of GaAsP/SiGe solar cell samples. Porous silicon was created by electrochemical etching on silicon wafers. Group-IV layers were grown in an ASM Epsilon LPCVD reactor, and III-V layers were completed in a Veeco Gen2000 MBE reactor.
2：Sample Selection and Data Sources:
6-inch (100) 6o off towards [110] silicon wafers with a resistivity of 0.01 Ω·cm were used.
3：01 Ω·cm were used. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: ASM Epsilon LPCVD reactor, Veeco Gen2000 MBE reactor, Leica DM 1750 M Nomarski microscope, Atomic Force Microscopy (AFM) tool, high-resolution X‐ray diffraction tool, Scanning Electron Microscope (SEM), Electrochemical CV profiling tool, Secondary Ion Mass Spectroscopy (SIMS).
4：Experimental Procedures and Operational Workflow:
Porous silicon creation, group-IV layers growth, III-V layers growth, visual inspection, AFM imaging, X-ray diffraction, SEM analysis, ECV profiling, SIMS measurement.
5：Data Analysis Methods:
Analysis of X-ray reciprocal space maps, SIMS and ECV profiles, EQE and SPV measurements, I-V curve analysis.
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Scanning Electron Microscope (SEM)
JSM-6335F
JEOL
Cross section analyses
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Veeco Gen2000 MBE reactor
Gen2000
Veeco
Completion of III-V layers
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Leica DM 1750 M Nomarski microscope
DM 1750 M
Leica
Visual inspection of the epi-wafers
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Atomic Force Microscopy (AFM) tool
Nanoscope III A
Bruker
Generation of AFM images
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high-resolution X‐ray diffraction tool
X'Pert Pro MRD
Panalytical
Taking reciprocal space maps of the structures
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ASM Epsilon LPCVD reactor
Epsilon
ASM
Growth of group-IV layers
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Electrochemical CV profiling tool
CPV21
Dage
Measurement of carrier concentration
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Secondary Ion Mass Spectroscopy (SIMS)
Measurement of chemical concentration
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