研究目的
Investigating the effects of film thickness and evaporation rate on the properties of SnSe thin films for photovoltaic applications.
研究成果
The crystallinity and grain size of SnSe thin films could be altered by changing the film thickness and evaporation rate. A larger grain size was obtained for SnSe thin films of film thickness 1.3 mm and evaporation rate of 2.5 ? s?1. The manufactured SnSe solar cells exhibited a high power-conversion efficiency of 1.02%.
研究不足
The study focuses on the effects of film thickness and evaporation rate on SnSe thin films, but other factors such as substrate temperature and material purity could also influence the properties of the films.
1：Experimental Design and Method Selection:
SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates. The structure of the device was soda-lime glass/Mo/SnSe/CdS/i-ZnO/ITO/Ni/Al.
2：Sample Selection and Data Sources:
Sn (purity =
3：999%) and Se (purity = 999%) were used to deposit SnSe thin films by co-evaporation. List of Experimental Equipment and Materials:
Raman spectrometer (Jobin-Yvon T64000), X-ray diffraction (XRD) using a Rigaku D/max 2550 V system, X-ray fluorescence (XRF) using a Shimadzu EDX-7000 setup, Cary5000 UV-VIS-NIR spectrophotometer, scanning electron microscopy (SEM) using a JEOL setup, solar simulator (Xe lamp; Newport) with a source meter (2400; Keithley), Hall effect (HMS3000; Ecopia).
4：Experimental Procedures and Operational Workflow:
SnSe thin films were deposited on a bare glass substrate and molybdenum-coated soda-lime glass substrate. The evaporation rate was controlled to 1,
5：5, 5 ? s?Film thickness was set to 6, 9, and 3 mm. Data Analysis Methods:
The optical parameters were taken by Cary5000 UV-VIS-NIR spectrophotometer. Surface morphology was investigated by SEM. Current–voltage (J–V) characteristics were studied using a solar simulator.
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X-ray diffraction system
D/max 2550 V
Rigaku
Used for structural analysis of SnSe thin films.
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X-ray fluorescence setup
EDX-7000
Shimadzu
Used for estimating the atomic ratio of Sn/Se in the films.
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Source meter
2400
Keithley
Used in conjunction with the solar simulator for J–V measurements.
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Raman spectrometer
T64000
Jobin-Yvon
Used for Raman spectroscopy to analyze the vibrational properties of SnSe thin films.
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UV-VIS-NIR spectrophotometer
Cary5000
Used for measuring the optical parameters of the SnSe thin films.
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Scanning electron microscopy setup
JEOL
Used for investigating the surface morphology of the SnSe thin films.
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Solar simulator
Newport
Used for studying the current–voltage (J–V) characteristics of the solar cells.
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Hall effect measurement system
HMS3000
Ecopia
Used for determining the electrical properties of the films.
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