研究目的
Investigating the counter-intuitive junction temperature behavior in AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) with different electrical characteristics.
研究成果
The junction temperature is mainly determined by the external quantum efficiency, injection efficiency, junction voltage, and injection current. The higher junction temperature observed in the higher-quality DUV LED device arises from its high injection efficiency, which provides more chances to dissipate power at the diode component.
研究不足
The device parameters used in the calculations were obtained at room temperature, neglecting their temperature dependence. A more accurate analysis can be possible by considering temperature-dependent device parameters.
1：Experimental Design and Method Selection:
The study involves the measurement of junction temperatures of two types of AlGaN-based DUV LEDs with different electrical characteristics. A simple equivalent circuit model is used to analyze the power dissipation within the LEDs.
2：Sample Selection and Data Sources:
Two types of AlGaN-based DUV LEDs, labeled DUV LED I and DUV LED II, were grown by metal–organic chemical vapor deposition (MOCVD) on a 4-in. c-plane sapphire substrate.
3：List of Experimental Equipment and Materials:
Parameter analyzer (Keithley 4200), spectrometer (Black C-50, StellarNet, Inc.), UV-enhanced optical fiber (F1000-UV-VIS-SR).
4：Experimental Procedures and Operational Workflow:
The electrical properties of the DUV LEDs were measured, and their emission spectra were obtained. The junction temperatures were acquired by observing the changes in the operation voltage depending on the temperature.
5：Data Analysis Methods:
The power dissipation in an LED device was directly calculated by analyzing the electrical properties based on a theoretical equivalent circuit.
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