研究目的
Demonstrating the GaInP/GaAs three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept to realize a monolithic double-junction device with individual current extraction.
研究成果
The HBTSC concept demonstrates potential for high-efficiency independently connected double-junction solar cells with a simple and compact structure. The study highlights the importance of minimizing series resistance and optimizing the base layer thickness to enhance performance.
研究不足
The study identifies resistive losses and luminescent coupling effects as factors affecting the performance of the HBTSC. The trade-off between reducing series resistance losses and maintaining material quality due to Zn diffusion is a limitation that requires optimization in future designs.
1：Experimental Design and Method Selection:
The HBTSC was designed with a heterojunction of GaInP and GaAs, aiming for a monolithic double-junction solar cell with individual current extraction.
2：Sample Selection and Data Sources:
Two samples differing in the thickness of the base layer (short base (SB) and long base (LB)) were compared.
3：List of Experimental Equipment and Materials:
The semiconductor structures were grown by metalorganic vapour-phase epitaxy (MOVPE) and processed using standard photolithography, wet etching, and metal evaporation techniques.
4：Experimental Procedures and Operational Workflow:
The processing included steps for base contact, emitter contact, and collector contact, followed by annealing and etching.
5：Data Analysis Methods:
The performance of the HBTSC was analyzed through illuminated current density-voltage (J-V) curves, dark J-V curves, and external quantum efficiency (EQE) measurements.
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