研究目的
Investigating the dielectric properties of nanoscale CeNi5 thin films deposited via pulsed laser deposition on glass or SiO2 substrates, focusing on their optical and electrical properties as a function of layer thickness and substrate material.
研究成果
The study successfully characterized the dielectric properties of nanoscale CeNi5 thin films, revealing thickness and substrate-dependent optical and electrical behaviors. The findings provide insights into the electronic density of states and energy band structures, with implications for applications in modern electronics and optics.
研究不足
The study is limited by the spectral domains covered by the available spectrophotometers, requiring extrapolations for missing UV-C and NIR domains. The interpretation of dielectric properties is also constrained by the theoretical models applied, which may not fully capture all aspects of the nanoscale films' behavior.
1:Experimental Design and Method Selection:
The study utilized pulsed laser deposition (PLD) to create nanoscale CeNi5 thin films on glass or SiO2 substrates. The complex dielectric function was analyzed through UV–Vis–NIR spectroscopy.
2:Sample Selection and Data Sources:
Bulk CeNi5 was prepared from
3:9% pure metals and used as the raw material for deposition. List of Experimental Equipment and Materials:
A liquid nitrogen cooled and stabilized He–Ne laser (
4:8 nm wavelength) for absolute reflectance measurements, Specord M40 and Specord 75IR spectrophotometers for spectral dispersion measurements. Experimental Procedures and Operational Workflow:
6 The films were deposited using modulated laser pulses, with thicknesses controlled by the number of laser impulses. Reflectance and transmittance measurements were performed, and data was processed using the Kramers–Kr?nig formalism.
5:Data Analysis Methods:
The spectral behavior of the optical refractive index and extinction coefficient was computed, leading to the determination of the complex dielectric function and electron loss functions.
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