研究目的
Investigating the bandgap tunability of Zn3-3xMg3xN2 alloy for its potential application as an earth-abundant solar absorber.
研究成果
Zn3-3xMg3xN2 alloy is a promising candidate for an n-type photovoltaic absorber due to its tunable bandgap, high absorption coefficient, and reasonable electron mobility. Further studies are needed to improve its stability and investigate defects.
研究不足
The long-time stability of Zn3-3xMg3xN2 films in air is not good, as they react with water vapor. The stability could be improved by encapsulation in MgO.
1：Experimental Design and Method Selection:
Zn3-3xMg3xN2 films were grown on YSZ (100) substrates at 140 oC by reactive co-sputtering from Zn and Mg targets. The Mg content was controlled by varying the rf power applied to the Mg cathode.
2：Sample Selection and Data Sources:
Films with varying Mg content (x ≤ 0.3) were characterized for structural, electrical, and optical properties.
3：3) were characterized for structural, electrical, and optical properties.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: X-ray diffractometer, X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), UV-Vis-NIR spectrophotometer.
4：Experimental Procedures and Operational Workflow:
Films were grown in a 1:4 mixture of Ar and N2 gas at a total pressure of 2 Pa. Characterization included XRD, XPS, AFM, and optical measurements.
5：Data Analysis Methods:
Optical absorption coefficient was calculated from transmittance and reflectance data. Bandgap was determined using Tauc plots.
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