研究目的
Investigating the silicon wafer etching rate characteristics by the high-power pulsed inductively coupled Ar/CF4 plasma, focusing on the etching rate dependence on bias voltage, CF4 content, and rf power.
研究成果
The silicon etching rate in a pure Ar plasma is 0.01 μm min?1, which increases to 0.23 μm min?1 in Ar/CF4 plasma. The etching rate is proportional to the bias voltage and increases sharply with CF4 content up to 10%, beyond which it stabilizes. The emission intensity of F* correlates with the etching rate, indicating the role of F atoms in the etching process.
研究不足
The study is limited to the use of Ar/CF4 gas mixtures and silicon wafers. The effects of other gas mixtures or materials were not investigated. The experimental setup's scalability and applicability to industrial processes were not explored.
1：Experimental Design and Method Selection:
A burst pulse high-power inductively coupled plasma (ICP) system with a frequency of 157 kHz was used to generate plasma. A rectangular pulsed voltage was applied to the wafer for etching.
2：Sample Selection and Data Sources:
Silicon wafers were used as samples. The etching rate was calculated by dividing the etching depth with the etching time.
3：List of Experimental Equipment and Materials:
A vacuum chamber, solenoid coil, capacitor, mass flow controllers, high voltage probe, current monitor, spectrometer, and surface roughness tester were used.
4：Experimental Procedures and Operational Workflow:
The plasma was generated with a 200 μs wide burst of a 157 kHz power supply. A rectangular pulsed voltage was applied to the target electrode. The etching process was conducted for 20 minutes.
5：Data Analysis Methods:
The etching rate was calculated from the surface profile measurements. Optical emission spectra were analyzed to understand the plasma characteristics.
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