研究目的
Investigating the effects of inserting a CsBr buffer layer between the NiOx hole transport layer and the perovskite layer to relieve lattice mismatch-induced interface stress and improve the performance and stability of perovskite solar cells.
研究成果
The insertion of a CsBr buffer layer between the NiOx hole transport layer and the perovskite layer significantly improves the power conversion efficiency and stability of perovskite solar cells by relieving lattice mismatch-induced interface stress, enhancing hole extraction/transfer, and reducing interface defects and traps. This method provides a simple and scalable strategy for optimizing perovskite solar cell interfaces.
研究不足
The study focuses on the specific configuration of perovskite solar cells with a CsBr buffer layer and does not explore other buffer materials or configurations. The long-term stability under various environmental conditions beyond ambient air with RH% ≈30% was not investigated.
1：Experimental Design and Method Selection:
The study involved inserting a CsBr buffer layer between the NiOx hole transport layer and the perovskite layer to investigate its effects on device performance and stability.
2：Sample Selection and Data Sources:
Perovskite solar cells with the configuration of ITO/NiOx/CsBr/MA1?xFAxPbI3?yCly/phenyl-C61-butyric acid methyl ester/bathocuproine/Ag were fabricated.
3：List of Experimental Equipment and Materials:
The study utilized X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL), and time-resolved PL (TR-PL) spectroscopy for analysis.
4：Experimental Procedures and Operational Workflow:
The CsBr buffer layer was inserted with different concentrations, and the devices' performance was evaluated through current density–voltage (J–V) curves, incident photon-to-current conversion efficiency (IPCE) spectra, and stability tests.
5：Data Analysis Methods:
The data were analyzed to assess the impact of the CsBr buffer layer on device performance, including power conversion efficiency (PCE), open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF).
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