研究目的
Investigating the performance of a Pd/Al2O3/MoS2/ITO MISM UV photodetector in terms of responsivity, detectivity, and external quantum efficiency.
研究成果
The fabricated Pd/Al2O3/MoS2/ITO MISM photodetector showed higher detectivity (~8.22x1013 jones) and EQE (~1.9 x 105%) compared to other reported work. The insertion of a very thin layer of insulating layer under Schottky contact significantly improves the performance of the photodetector.
研究不足
The study focuses on the performance of the photodetector under specific conditions (wavelength 308nm, 1V bias, and light intensity 13.6μW/cm2). The scalability and practical application under varying conditions are not explored.
1：Experimental Design and Method Selection:
The study involves the fabrication and analysis of a Pd/Al2O3/MoS2/ITO MISM UV photodetector using RF sputtering method. The structural and morphological details of films are characterized by XRD and FESEM. Optical characterization is performed using variable angle ellipsometry.
2：Sample Selection and Data Sources:
Few layers MoS2 deposition was carried out on ITO coated glass substrate by RF sputtering method, followed by annealing at 1200C in vacuum. Thin layer of Al2O3 was then obtained over MoS2 by repeating the sputtering process with Al2O3 target.
3：List of Experimental Equipment and Materials:
RF sputtering system, XRD (Rigaku smart lab in plane grazing angle XRD), FESEM (Nova NanoSEM 450), Raman spectroscopy (Princeton Instruments Action pro SP-2500), parameter analyzer (DMM-34410A, Agilent).
4：Experimental Procedures and Operational Workflow:
Initial deposition of MoS2 on ITO coated glass substrate, followed by annealing. Deposition of Al2O3 layer over MoS2, then patterning of palladium contacts on the top of Al2O3 layer using shadow mask technique.
5：Data Analysis Methods:
The spectral responsivity is analyzed for wavelength range of 300nm-800nm using monochromator. The responsivity, detectivity, and EQE are calculated using specific equations.
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