研究目的
Investigating the integration of a metal-insulator-metal-based plasmonic metamaterial absorber with a thermoelectric infrared sensor to enhance responsivity for human detection applications.
研究成果
The monolithic integration of MIM PMA and MEMS IR sensor in CMOS platform successfully enhances the absorptivity within human detection wavelength region, increasing the responsivity of IR sensor. The device demonstrates a responsivity of 89.91V/W, detectivity of 5.99×108W-1, and response time of 126msec at 1torr.
研究不足
The study is limited by the process variation affecting the dimensions of MIM antenna, though the impact on absorption spectrum is minor. The response time of the IR sensor is influenced by the vacuum environment, which could affect performance.
1：Experimental Design and Method Selection:
The study employs TSMC 0.18 1P6M CMOS process to fabricate the device, integrating MIM PMA with TE IR sensor. The design leverages the small line-width feature of CMOS process for sub-wavelength criteria of MIM absorber.
2：18 1P6M CMOS process to fabricate the device, integrating MIM PMA with TE IR sensor. The design leverages the small line-width feature of CMOS process for sub-wavelength criteria of MIM absorber.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The samples are fabricated using standard TSMC CMOS platform, with specific patterns (cross and circle) designed for MIM antenna.
3：List of Experimental Equipment and Materials:
Includes TSMC CMOS process tools, H2SO4/H2O2 for metal wet etching, XeF2 for membrane release, and RIE for top SiO2 layer removal.
4：Experimental Procedures and Operational Workflow:
The process involves CMOS chip preparation, metal and tungsten-via etching, membrane release, and top SiO2 layer removal to expose MIM antennas.
5：Data Analysis Methods:
Absorption spectrum measured by FTIR-imager (Bruker, Tensor 27), responsivity measurement setup includes DUT, commercial IR sensor, black-body radiator, vacuum chamber, germanium window, and nanovoltmeter.
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