研究目的
Investigating the spin-strain coupling parameters of divacancy qubits in silicon carbide for quantum-enhanced sensing applications.
研究成果
The divacancy qubits in 3C-SiC exhibit favorable spin-stress coupling parameters for quantum-enhanced sensing applications, with potential for superior sensitivity compared to the NV center in diamond, especially in high-quality samples with improved spin coherence times.
研究不足
The study is limited by the quality of the 3C-SiC samples and the assumption of small perturbations of the C3v symmetry configuration. The sensitivity estimates depend on the spin coherence times, which vary with sample quality.
1：Experimental Design and Method Selection:
Density-functional-theory calculations were employed to study the spin-strain coupling parameters of divacancy qubits in 3C-SiC and 4H-SiC.
2：Sample Selection and Data Sources:
Models of the divacancy in bulk 3C-SiC and 4H-SiC were constructed with supercells within the Γ-point approximation.
3：List of Experimental Equipment and Materials:
The calculations were performed using the VIENNA AB INITIO SIMULATION PACKAGE (VASP) with the Perdew-Burke-Ernzerhof functional and projector-augmented-wave formalism.
4：Experimental Procedures and Operational Workflow:
The spin-strain coupling parameters were calculated by applying mechanical strain to the supercells and allowing atomic positions to relax, followed by linear regression to determine coupling-strength parameters.
5：Data Analysis Methods:
The zero-field-splitting matrix D was calculated for each strain configuration to determine the spin-strain coupling parameters.
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