研究目的
To develop a fabrication process for OMT-coupled KIDs compatible with dual-polarization, multi-chroic pixels for CMB applications.
研究成果
A fabrication process for OMT-coupled KIDs has been developed, achieving a good yield (> 80%) on prototype devices. The process is compatible with dual-polarization, multi-chroic pixels and plans are underway to fabricate a kilo-pixel array upon satisfactory demonstration.
研究不足
The initial fabrication run encountered issues with the etch rate during DRIE processing due to charge buildup caused by a thick oxide layer, which was mitigated by decreasing the oxide layer thickness.
1:Experimental Design and Method Selection:
The fabrication process involves creating a prototype planar orthomode transducer (OMT)-coupled multi-color KID array optimized for 220/270 GHz frequency bands using silicon-on-insulator wafers.
2:Sample Selection and Data Sources:
High-resistivity silicon-on-insulator (SOI) wafers are used.
3:List of Experimental Equipment and Materials:
Includes a maskless direct write lithography writer, ICP fluorine etcher, High-Density Plasma Chemical Vapor Deposition (HDPCVD) system, and deep reactive ion etcher (DRIE).
4:Experimental Procedures and Operational Workflow:
The process involves cleaning the wafer, depositing and etching layers of Al and Nb, growing a dielectric layer, patterning and etching to form the OMT and KID membranes, and finally releasing the membranes.
5:Data Analysis Methods:
The yield of the fabrication process is analyzed.
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