研究目的
Investigating the mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias.
研究成果
The ON-state gate bias in p-GaN gate AlGaN/GaN HEMTs induces an increase in OFF-state leakage current due to persistent photoconductivity effects caused by electroluminescence. The leakage current increases with higher gate bias voltage and longer bias duration, and it takes more than 20 s at room temperature for the increased leakage current to decrease to its equilibrium level in the dark. The findings can help in designing gate-driving circuits to ensure low OFF-state leakage current and avoid potential reliability degradation.
研究不足
The study is limited to p-GaN gate AlGaN/GaN HEMTs and does not explore other types of GaN-based devices. The impact of internal electroluminescence on device performance is more straightforward and effective in p-GaN gate HEMTs due to the natural hole source provided by the p-doped (Al)GaN layer.
1：Experimental Design and Method Selection:
The study involved observing the OFF-state leakage current in p-GaN gate AlGaN/GaN HEMTs after applying ON-state gate bias. The impact of gate bias voltage, duration, and ambient temperature on leakage current was systematically investigated.
2：Sample Selection and Data Sources:
Commercial p-GaN gate AlGaN/GaN HEMTs were used as the device under test (DUT).
3：List of Experimental Equipment and Materials:
An Agilent B1505A power device analyzer/curve tracer was used to generate ON- and OFF-state bias conditions. An Ocean Optics CCD spectrometer was used to record the EL spectrum.
4：Experimental Procedures and Operational Workflow:
The dynamic behavior of OFF-state leakage current was investigated immediately after the application of an ON-state gate bias. The decay of the OFF-state leakage current was fitted using a stretched-exponential law.
5：Data Analysis Methods:
The decay of the OFF-state leakage current was analyzed to understand the persistent photoconductivity effect induced by electroluminescence.
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