研究目的
To optimize the Sopori etching procedure for multicrystalline silicon samples with high dislocation densities and compare it with the Secco etching procedure, aiming to replace the toxic Secco etchant with Sopori for precise dislocation density measurements.
研究成果
The Sopori etchant can replace the toxic Secco etchant for dislocation density measurements, but requires optimization for high dislocation density areas. Shorter etching times with diluted Sopori etchant are suggested for precise measurements in high-density ranges.
研究不足
The PVScan tool has a limited range for measuring dislocation densities, failing to detect densities below 104 cm-2 and above 3x106 cm-2 due to signal-to-noise ratio issues and etch pit overlap. Long etching times introduce artifacts affecting measurement precision.
1：Experimental Design and Method Selection:
The study compares the PVScan tool and microscope image analysis for assessing dislocation density on selectively etched multicrystalline silicon samples. It evaluates the effect of etching methods on the results and suggests optimizations for the Sopori etching procedure.
2：Sample Selection and Data Sources:
Measurements were performed on a 5x5 cm slab from a high-performance multicrystalline silicon ingot, prepared by grinding and polishing.
3：List of Experimental Equipment and Materials:
Includes glassware for handling HF, grinding and polishing machines, Sopori and Secco etchants, PVScan 6000 measurement system, metallographic microscope, and software like GIMP, ImageJ, Matlab, and MS Excel.
4：Experimental Procedures and Operational Workflow:
The sample was etched using Sopori and Secco etchants under varying conditions, followed by dislocation density measurements with PVScan and microscope image analysis.
5：Data Analysis Methods:
Etch pit density was calculated using ImageJ software, comparing results from PVScan and microscope image analysis.
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