研究目的
Investigating the kinetics of thermal annealing of electron and hole centers in stoichiometric MgAl2O4 spinel irradiated by fast neutrons and protons, and comparing the properties of MgAl2O4 single crystals and optical polycrystalline ceramics.
研究成果
The study demonstrates that the annealing kinetics of radiation-induced defects in MgAl2O4 spinel is qualitatively similar for both single crystals and optical ceramics, as well as for different types of irradiation. The strong correlation between the effective migration energy and pre-exponential factor is discussed in terms of the Meyer-Neldel rule. The results provide insights into the radiation resistance of MgAl2O4 spinel and its potential applications in harsh radiation environments.
研究不足
The study is limited to the analysis of radiation-induced defects in MgAl2O4 spinel and does not cover other materials or defect types. The correlation between the effective migration energy and pre-exponential factor, while strong, is based on a limited set of experimental conditions.
1：Experimental Design and Method Selection:
The study involved the irradiation of MgAl2O4 single crystals and optical ceramics with fast neutrons and protons, followed by thermal annealing and analysis of the annealing kinetics of radiation-induced defects.
2：Sample Selection and Data Sources:
Nominally pure MgAl2O4 single crystals and transparent polycrystalline ceramics with different grain sizes were used.
3：List of Experimental Equipment and Materials:
Spectrometer JASCO V-660, homemade setup equipped with a vacuum monochromator VMR-2, X-band (
4：8 GHz) spectrometer Bruker ELEXYS-II EExperimental Procedures and Operational Workflow:
The samples were irradiated, subjected to stepwise thermal annealing, and their optical absorption and EPR spectra were measured at room temperature.
5：Data Analysis Methods:
The annealing kinetics was analyzed using a phenomenological theory that takes into account the mutual diffusion-controlled approach to the electron and hole centers and their recombination.
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