摘要： All-inorganic perovskite CsPbIBr2, has drawn much attention for photovoltaic (PV) application due to its excellent intrinsic stability. However, low device performance and high fabrication temperature still hamper its further progress in flexible application. Herein, Zn substitution has been used to improve the nucleation and growth process for low temperature processed a-phase CsPbIBr2 film. Zn incorporated CsPbIBr2 film exhibits good crystallinity, compact surface morphology and depressed defect state. Low temperature (100 and 160°C) processed carbon based CsPbIBr2 solar cells with improved PV performance have been prepared by using Zn incorporation and room deposited electron transport layer (ETL). A champion efficiency over 9% can be achieved through Zn substitution, which is one of the best values reported for the low temperature processed CsPbIBr2 solar cell without using hole transport layer (HTL). Efficiency over 5% can also be achieved for larger area (1 cm2) rigid and flexible CsPbIBr2 solar cells. These results would provide a new route for preparing high-performance and low temperature processed inorganic perovskite solar cell.