研究目的
Studying spectral, temporal, and polarisation characteristics of luminescence of heavily doped AlxGa1 – xN structures under optical pumping and measuring the quantum efficiency and optical gain in these structures.
研究成果
The study confirms the promising employment of heavily doped AlxGa1 – xN structures as working materials in lasers tunable in a wide wavelength range, with measured optical gains and quantum efficiencies supporting their potential for various applications.
研究不足
The study is limited to room temperature measurements and does not explore the effects of temperature variations on luminescence characteristics.
1：Experimental Design and Method Selection:
The study involved optical pulsed pumping at l = 266 nm to investigate luminescence characteristics of AlxGa1 – xN films.
2：Sample Selection and Data Sources:
AlxGa1 – xN films of various compositions (x =
3：42 – 1) on sapphire substrates were studied. List of Experimental Equipment and Materials:
A pulsed Nd:YAG laser at l = 266 nm, spectrometer with high dynamic range, FEU-106 photomultiplier, Tektronix 2024 oscilloscope.
4：Experimental Procedures and Operational Workflow:
Samples were pumped from the side of the AlGaN film, and emission was detected at an angle of 45° to the sample surface and from a structure edge.
5：Data Analysis Methods:
The optical gains were measured by the single-pass method, and luminescence quantum yields were measured relative to the R6G dye solution in ethanol.
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