研究目的
To propose a unified explanation for the two-step degradation of a-IGZO TFTs under DC PBTI stress with or without different drain stress voltages (Vds).
研究成果
The study successfully proposes a unified explanation for the two-step degradation of a-IGZO TFTs under DC PBTI stress, attributing the initial negative Vth shift to donor-like defect states and the subsequent positive shift to electron trapping. The findings highlight the competition between donor-like states creation and electron trapping as the underlying mechanism for the observed transitions.
研究不足
The study focuses on DC bias stress conditions and may not cover all operational scenarios of a-IGZO TFTs. The influence of other environmental factors beyond H2O and oxygen vacancies is not extensively explored.
