摘要： We epitaxially grew 7 mol. % Nd-doped BaSnO3 (NBSO) thin films on double-side polished SrTiO3 (001) single-crystal substrates and optimized the oxygen pressure (PO2), substrate temperature (TS), and film thickness (t) to achieve excellent structural, optical, and electrical performance. By keeping TS (?800 (cid:2)C) constant, NBSO films prepared at PO2 ? 10 Pa show the best crystallization, yielding a full-width at half-maximum (FWHM) of the x-ray diffraction rocking curve of 0.079(cid:2) and exhibiting a room-temperature resistivity (q) of (cid:3)1.85 mX cm and a volume carrier density (n) of (cid:3)8.5 (cid:4) 1020/cm3. By keeping PO2 (?10 Pa) constant, the room-temperature q of NBSO films could be reduced to as low as 0.5 mX cm by increasing TS from 700 to 825(cid:2); meanwhile, the volume carrier density and mobility show the maximum of 5.04 (cid:4) 1020/cm3 and 24.9 cm2/Vs, respectively, for TS ? 825 (cid:2)C. For all as-grown NBSO thin films, the optical transmittance in the visible wavelength region is larger than 80%. The optimized comprehensive properties of the NBSO films with FWHM ? 0.11(cid:2), q ? 0.5 mX cm, l ? 24.9 cm2/Vs, and T > 80% are superior to those of other rare-earth and 4d- and 5d-transition metal-doped BaSnO3 thin films.