研究目的
Investigating the characteristics of detectors based on high-purity epitaxial GaAs layers for the spectrometry of soft-X and γ rays, comparing detectors with different rectifying contacts (Schottky barrier and p–n junction), and analyzing their spectral characteristics under various conditions.
研究成果
The developed surface-barrier and p–i–n detectors based on high-purity epitaxial GaAs layers demonstrated promising characteristics for the spectrometry of soft-X and γ rays. The p–i–n structures showed better energy resolution and charge-collection efficiency compared to Schottky-barrier detectors. The study highlights the potential of GaAs-based detectors for applications requiring high-performance X- and γ-ray detection in the energy range up to 100 keV.
研究不足
The study is limited by the thickness of the epitaxial GaAs layers (up to 120 μm) and the concentration of charge carriers (3 × 10^11 cm–3). The energy resolution was mainly limited by noise in the electronic path. The photovoltaic mode operation is constrained by the poor collection of the hole signal component.
1：Experimental Design and Method Selection:
The study involved the development and characterization of surface-barrier and p–i–n detectors based on 40-μm-thick high-purity epitaxial GaAs layers. The detectors were tested under irradiation by 57Co and 241Am sources at different bias voltages and in a photovoltaic mode. Simulation of γ-photon interaction with the detector material was performed using the Geant
2：21 software package. Sample Selection and Data Sources:
Prototypes of detectors were manufactured on the basis of 40-μm-thick epitaxial layers of high-purity GaAs. The layers were grown using the chloride vapor-phase epitaxy technique.
3：List of Experimental Equipment and Materials:
The detectors were connected to an ADC-1K-2M 1024-channel amplitude-to-digital converter through a BUI-52 low-noise charge-sensitive preamplifier and an ORTEC 572A amplifier.
4：Experimental Procedures and Operational Workflow:
The energy spectra of γ quanta were measured using OSGI-type 241Am and 57Со sources. The measurements were carried out at room temperature in a dark chamber.
5：Data Analysis Methods:
The energy resolution and charge-collection efficiency were evaluated based on the measured spectra. The simulation results were compared with the experimental data to assess the detector performance.
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