研究目的
Investigating the phase formation and crystal growth of Ca3TaAl3Si2O14 (CTAS) piezoelectric single crystals to understand the conditions necessary for growing high-quality single crystals without impurity phases.
研究成果
A higher sintering temperature (1350 °C) promotes the creation of a CTAS phase and contributes to the growth of CTAS single crystals without impurity phases. The phase of the sintered powder is a critical factor for the crystal growth of CTAS single crystals due to liquid immiscibility in the melt.
研究不足
The study highlights the difficulty in growing CTAS single crystals with high crystal quality and the presence of impurity phases at lower sintering temperatures. The growth conditions of the Czochralski method have not been fully optimized, leading to crystals with cracks.
1：Experimental Design and Method Selection:
The study involved sintering CTAS powders at various temperatures and growing single crystals using the Czochralski method.
2：Sample Selection and Data Sources:
Starting materials were mixed as the stoichiometric nominal composition of CTAS and sintered at different temperatures.
3：List of Experimental Equipment and Materials:
Used a ?50 mm Ir crucible heated by a radio-frequency (RF) induction coil, insulators (zirconia and aluminum), and a quartz tube.
4：Experimental Procedures and Operational Workflow:
Powders were sintered, and single crystals were grown by pulling-up the melt using a CTGAS seed crystal.
5：Data Analysis Methods:
Phase formation was investigated using powder X-ray diffraction (XRD), and the local structures of the single crystals were observed by scanning electron microscopy (SEM).
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