研究目的
Investigating the electrical properties of silver thin layers deposited on silicon p-type substrate using the four-point probe method and XRD analysis.
研究成果
The research demonstrated that increasing the thickness of silver thin layers decreases sheet resistance and electrical resistivity while increasing conductance. The optimal electrical properties were observed at 400 nm thickness, where the silver layer exhibited the most conductivity and the lowest resistance, correlating with the formation of a face-centered cubic (FCC) structure with crystal orientation (200).
研究不足
The study is limited to silver thin layers of specific thicknesses on silicon substrates. The effects of other substrates or deposition methods were not explored.
1：Experimental Design and Method Selection:
The study involved depositing silver thin layers on silicon substrates using thermal evaporation and analyzing their electrical and structural properties with four-point probe and XRD analysis.
2：Sample Selection and Data Sources:
Silver layers of 300, 360, and 400 nm thicknesses were deposited on p-type silicon substrates with (100) orientation.
3：List of Experimental Equipment and Materials:
Equipment included a deposition device furnace, Edvard STM device for thickness measurement, XRD analysis device (PHLIPS-PW3710), and a four-point probe meter.
4：Experimental Procedures and Operational Workflow:
Substrates were chemically cleaned, silver was evaporated using tungsten metal in a vacuum, and thickness was measured during deposition. XRD and four-point probe analyses were then conducted.
5：Data Analysis Methods:
Electrical resistivity, sheet resistance, and conductance were calculated using specific formulas. XRD data was analyzed to determine crystal structure and grain size.
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