研究目的
To investigate a method to enable higher voltage operation in Si field emitter arrays (FEAs) with integrated Si nanowire current limiters, potentially increasing achievable current densities.
研究成果
Higher breakdown voltage and hence higher voltage operation is demonstrated by a timed etch of the oxide in the vicinity of the nanowire in current ballasted Si FEAs. However, this method also deteriorates the field emission properties.
研究不足
The method to increase breakdown voltage by a deeper etch of the oxide in the vicinity of the nanowire deteriorates the field emission properties, possibly due to the misalignment of the tip due to lack of mechanical support or increased surface states.
1：Experimental Design and Method Selection:
The study focuses on the dielectric breakdown occurring in the vicinity of the nanopillar in Si FEAs with integrated nanowire current limiters. A deeper etch is investigated to increase the breakdown voltage.
2：Sample Selection and Data Sources:
Si FEAs with integrated nanowire current limiters are fabricated. The anode, gate, and emitter currents of 500 by 500 arrays of Si field emitters were monitored with respect to the gate-emitter voltage in an ultra-high vacuum system.
3：List of Experimental Equipment and Materials:
The study uses Si FEAs with integrated nanowire current limiters, a polysilicon layer as the gate, and Au pads for contacts.
4：Experimental Procedures and Operational Workflow:
The breakdown voltage of the Si FEA is measured in air depending on the aperture opening time. The I-V characteristics at the anode with two different etch times are demonstrated.
5：Data Analysis Methods:
The extracted parameters of β from the slope of the Fowler-Nordheim plot are analyzed to understand the field emission properties.
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