研究目的
Investigating the effect of low‐energy ion impact on the structure of hexagonal boron nitride (hBN) films deposited using a high‐density surface‐wave plasma source under a high ion flux condition.
研究成果
The study demonstrates that the structural order and crystallinity of sp2‐bonded phase in hBN films can be increased with decreasing ion energy while maintaining high mass density, under a high ion flux condition. This suggests that low‐energy ion irradiation is effective for controlling the structure of hBN films in plasma‐enhanced CVD processes.
研究不足
The study focuses on the structural properties of hBN films under specific ion energy and flux conditions. The effects of other deposition parameters and the scalability of the process for industrial applications are not explored.
1：Experimental Design and Method Selection:
A high‐density surface‐wave plasma source was used to deposit hBN films under low‐energy ion irradiation. The ion energy was controlled by applying a negative or positive bias voltage to the substrate.
2：Sample Selection and Data Sources:
n‐type Si (100) substrates were used for deposition.
3：List of Experimental Equipment and Materials:
The setup included a cylindrical stainless steel chamber, a quartz disk window, a sintered hBN disk, a Mo substrate holder with a hot‐filament heater, and a Langmuir probe for plasma potential measurement.
4：Experimental Procedures and Operational Workflow:
The substrate was placed at an optimized location to maximize ion flux. The ion energy was varied by adjusting the substrate bias voltage.
5：Data Analysis Methods:
The structure of the films was characterized using Fourier transform infrared spectroscopy (FTIR), X‐ray diffraction (XRD), and X‐ray reflectivity (XRR).
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