研究目的
Investigating the fabrication and performance of a high-frequency photocathode based on a CNT-yarn emitter and a semi-insulating GaAs photoswitch for field electron emission in a diode configuration.
研究成果
The integration of the GaAs photoswitch and the single CNT yarn emitter is a simple method that can be optimized for different applications. The yarn emitter showed high FE currents and low threshold electric fields, making it a promising emitter for new high-frequency photocathodes. The hybrid integration of the ultrafast LT GaAs photoswitch with the yarn emitter can provide much shorter electron bunches in picosecond range, useful for miniaturized terahertz vacuum tubes.
研究不足
The study mentions the potential for optimization with low-temperature grown GaAs for shorter electron bunches and the integration of a low-cost pulsed VCSEL laser for a more compact high-frequency photocathode.
