研究目的
Investigating the advantages of InAs nanowire-based electronic devices and their development status.
研究成果
InAs nanowires are promising for high-performance electronic devices due to their high electron mobility and potential for miniaturization. However, challenges such as high OFF-state current and interface quality need to be addressed for practical applications.
研究不足
The paper highlights several challenges, including high OFF-state current of devices, interface state between InAs nanowires and gate dielectric, and the relation between structure of InAs nanowires and their device performance.