研究目的
Investigating the Low-Frequency Noise (LFN) in fully depleted n-type Silicon-On-Insulator (SOI) nanowire transistors to understand the noise behavior and its dependence on device dimensions and operating conditions.
研究成果
The investigation revealed that LFN in SOI nanowire transistors is influenced by device dimensions and operating conditions, with flicker noise predominating at lower frequencies and generation-recombination noise at higher frequencies. The study provides insights into noise mechanisms and their dependence on device geometry and bias conditions, suggesting directions for optimizing device performance.
研究不足
The study is limited to long-channel devices and does not explore the impact of very short channel lengths on LFN. Additionally, the analysis is confined to linear region operation with low drain bias.
1：Experimental Design and Method Selection:
The study evaluates LFN in SOI nanowire transistors with varying fin widths and channel lengths, focusing on noise behavior in linear region operation with low drain bias.
2：Sample Selection and Data Sources:
Devices with channel lengths of 1μm and 10μm and fin widths ranging from 15nm to 105nm were fabricated at CEA-LETI.
3：List of Experimental Equipment and Materials:
Spectrum Analyzer (Agilent Technologies 4395A), low noise amplifier (SR560 from Stanford Research), semiconductor device parameter analyzer (B1500 from Keysight).
4：Experimental Procedures and Operational Workflow:
Measurements were performed in linear region with VDS = 50mV, using a spectrum analyzer and low noise amplifier to obtain voltage noise (SVD).
5：Data Analysis Methods:
Normalized noise (SID/IDS^2) was calculated and analyzed as a function of frequency and gate voltage overdrive to understand noise mechanisms.
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