研究目的
To achieve record-low specific contact resistivity ρc down to 4.4×10-10 ?-cm2 for Ti/p+-GeSn contacts by utilizing Ga and Sn surface segregation.
研究成果
The Ga and Sn surface segregated p+-GeSn film with an average active Ga doping concentration of 3.4×1020 cm-3 and surface Sn composition of more than 8% was grown by MBE. ρc as low as 4.4×10-10 ?-cm2 (average ρc is 6.5×10-10 ?-cm2) was achieved by forming Ti contact on Seg. p+-GeSn. This makes the Ti/Ge1-xSnx contact very attractive, not only for GeSn channel transistors, but also SiGe or Ge p-channel transistors with GeSn S/D regions.
研究不足
The study does not explore the use of advanced implantation and annealing techniques which could potentially further reduce ρc.
1：Experimental Design and Method Selection:
The study utilized molecular beam epitaxy (MBE) to grow Ga and Sn surface-segregated p+-GeSn films. Nano-TLM test structures were fabricated to measure the specific contact resistivity.
2：Sample Selection and Data Sources:
Samples included p+-GeSn films with and without Ga and Sn surface segregation. Data was collected from more than 90 devices across 14 sets of Nano-TLM structures.
3：List of Experimental Equipment and Materials:
MBE for film growth, Nano-TLM structures for resistivity measurement, Ti for contacts.
4：Experimental Procedures and Operational Workflow:
Fabrication of Ti contacts on p+-GeSn films, measurement of specific contact resistivity using Nano-TLM structures.
5：Data Analysis Methods:
Extraction of ρc from the measured terminal resistances of the Nano-TLM structures.
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