研究目的
Investigating the nature of the nontrivial interface states in topological/normal insulator (TI/NI) heterostructures and exploring the tunability of the interface gap by controlling the NI thickness for device design.
研究成果
The study demonstrates the tunability of the interface gap in TI/NI heterostructures by controlling the NI thickness, which can be exploited for device design. It also verifies the preservation of an in-plane spin texture in the interface-gaped topological states.
研究不足
The study focuses on IV?VI compounds and may not be directly applicable to other material systems without further investigation.
1：Experimental Design and Method Selection:
The study is based on first principles and a recently developed scheme to construct ab initio effective Hamiltonian matrices from density functional theory calculations.
2：Sample Selection and Data Sources:
Systems of realistic sizes with high accuracy and control over the relevant parameters such as TI and NI band alignment, NI gap, and spin?orbit coupling strength were studied.
3：List of Experimental Equipment and Materials:
The calculations were performed using the plane wave package Quantum Espresso and Vienna ab initio simulation package code.
4：Experimental Procedures and Operational Workflow:
The methodology involves mapping the plane waves Hilbert space onto the compact subspace spanned by the pseudoatomic orbitals used to construct the atomic pseudopotentials.
5：Data Analysis Methods:
The results were analyzed to show the interface gap tunability by appropriately controlling the NI thickness and the preservation of an in-plane spin texture in the interface-gaped topological states.
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