1：Experimental Design and Method Selection:

The study involved the growth of undoped and boron doped InSe single crystals using the modified Bridgman method. The structural properties were analyzed using XRD and Raman spectroscopy, while electrical properties were investigated through I-V measurements.

2：Sample Selection and Data Sources:

Samples were cleaved from the ingots with a razor blade. The elemental compositions of selected crystals were determined by Inductively Coupled Plasma (ICP) spectroscopy.

3：List of Experimental Equipment and Materials:

XRD measurements were performed using a Bruker D8 Discovery diffractometer with Cu-Kα radiation. Raman measurements were carried out using a Bruker FRA 106/S Raman spectrometer with a 1064 nm line of Nd-YAG laser. Electrical properties were measured using a Keithley 2400 I-V source meter.

4：Experimental Procedures and Operational Workflow:

XRD and Raman measurements were conducted at room temperature. Electrical measurements were performed in the 380-77 K temperature range by two probe method with indium contacts made in parallel geometry.

5：Data Analysis Methods:

XRD data were analyzed to determine lattice parameters and crystallite size using Scherrer equation. Raman spectra were analyzed to identify phonon bands. Electrical conductivity data were analyzed to determine activation energies and conduction mechanisms.